Unlike hard drives, NAND flash memory is insensitive to shock and vibration. On the other hand, it has one major disadvantage: it ages and has a limited number of write and erase cycles.
Well-known manufacturers are addressing this shortcoming and have set out to make flash memory durable and long-lasting for the industry. As a result, premature failures in the field can be successfully avoided. Provided that memory evaluation is not taken lightly.
SLC (Single Level Cell) NAND memory has the longest life. This basic rule still holds true. SLC NAND memory allows by far the most write and erase cycles and therefore has the longest life. The SLC memory from Cactus Technologies sold by Syslogic has A-grade flash cells (NAND) from Kioxia with 32 or 24 nanometre technology. These are the largest NAND shrink sizes available. SLC memory from Cactus Technologies is one of the most durable flash memories on the market. They offer between 50,000 and 100,000 write and erase cycles. This means that they do not need to be replaced for a long time. The only disadvantages of SLC memory are its higher price compared to MLC (Multi Level Cell) memory and its limited storage capacity.
Syslogic recommends investing in SLC memory for all applications where long life is important and failure is critical. It is also worth investing in SLC memory for high thermal loads, as it is much more reliable under extreme temperatures than MLC memory.
Cactus Technologies – SLC NAND
Pseudo Single Level Cell (pSLC) memory is a commercially and technologically interesting compromise. The pSLC technology uses the low-cost MLC chips for only two different charge states - the NAND cells are therefore operated like an SLC memory. As a result, pSLC technology is significantly faster than conventional MLC technology. Cactus Technologies' pSLC memory also increases the number of possible write and erase cycles from 3,000 with MLC to 20,000. At the same time, the endurance of the storage media increases by a factor of six, while the price per bit stored only doubles.
For industrial applications with high memory requirements that still demand high endurance and reliability, pSLC memory can be an attractive alternative. It is a misconception, however, that pSLC memory is equivalent to SLC memory. True SLC memory can last up to five times longer than pSLC memory.
Cactus Technologies – pSLC NAND
MLC memory has long been frowned upon in the industry. However, there are now memory manufacturers using clever firmware to extend the life and reliability of MLC flash memory. However, MLC NAND still achieves up to thirty times fewer read and write accesses than SLC memory. As a result, Syslogic recommends MLC memory only for applications where either durability is not a key factor or where very large storage capacities are required.
When choosing MLC memory, it is important to choose a manufacturer with industrial experience. The durability of MLC memory can also be extended by using large capacities. This distributes read and write accesses across more NAND cells.
Cactus Technologies – MLC NAND
Triple Level Cell (TLC) NAND memory, commonly used in the consumer market, requires eight different charge levels to read three bits. Even the slightest signs of ageing lead to errors. As a result, TLC memory wears out particularly quickly.
Its susceptibility to ageing is a disadvantage, while its high storage density is an advantage of TLC NAND. As industrial applications also require ever larger storage capacities, TLC memory has now become established. However, there are industrial-grade TLC NANDs that offer better retention and endurance than consumer-grade TLC. The Cactus Technologies TLC memory sold by Syslogic uses high quality Kioxia TLC NAND. Syslogic recommends TLC memory only for very cost sensitive applications or when very large storage capacities are required.
Cactus Technologies – TLC NAND
Flash memory certainly meets the demands of industry in terms of longevity. The prerequisite for this is a thorough evaluation based on the requirements. Modern flash memories also have sophisticated control algorithms that constantly monitor the memory status. If the end of a flash memory becomes apparent, it is possible to react at an early stage. In this way, failures in the field can be successfully avoided - and with them a lot of frustration and aggravation.
